InP DHBT-Based IC Techno Data Communi

In this paper, we report the achieved performance of devices and integrated circuits (ICs) using a manufacturable InP DHBT-based technology. High speed MBE grown InGaAs/InP DHBTs with an effective emitter junction area of 4.8 μm exhibited peak fT and fMAX values of 265 and 305 GHz, respectively, at a collector current density of 3.75 mA/μm. Using this technology, a set of basic analog and digital IC building blocks, including lumped amplifiers, voltage controlled oscillators, multiplexers and demultiplexers, suitable for operation at 40 Gb/s and beyond, have been successfully designed and fabricated. The 3” sem solid These doped compo the col The based base-e A ben device